Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors.
Identifieur interne : 000D48 ( Main/Exploration ); précédent : 000D47; suivant : 000D49Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors.
Auteurs : RBID : pubmed:22549938English descriptors
- KwdEn :
- MESH :
- chemical , chemical synthesis : Organotin Compounds.
- chemical , chemistry : Organotin Compounds, Oxides.
- Magnetic Resonance Spectroscopy, Tin Compounds, Transistors, Electronic.
Abstract
The syntheses and structural elucidation of dimeric [Sn(OCyHex)(2)] (1), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)(3)Sn}(2)] (M = Li (2), Na (3), K (4)), and of the first heteroleptic heterotermetallic Li/In/Sn-haloalkoxide clusters [X(2)In{LiSn(2)(OCyHex)(6)}] (X = Br (5), Cl (6)) with a double seco-norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin-rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy-dispersive X-ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin-containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In(2)O(3) lattice and partially occupied In(3+) sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin-film field-effect transistors (FETs) were fabricated by spin-coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25-700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge-carrier mobility of 6.36×10(-1) cm(2) V(-1) s (calcination at 250 °C) and an on/off current ratio of 10(6).
DOI: 10.1002/chem.201103594
PubMed: 22549938
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors.</title><author><name sortKey="Samedov, Kerim" uniqKey="Samedov K">Kerim Samedov</name><affiliation wicri:level="3"><nlm:affiliation>Institute of Chemistry: Metalorganics and Inorganic Materials, Technische Universität Berlin, Strasse des 17. Juni 135, 10623 Berlin, Germany.</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Chemistry: Metalorganics and Inorganic Materials, Technische Universität Berlin, Strasse des 17. Juni 135, 10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Aksu, Yilmaz" uniqKey="Aksu Y">Yilmaz Aksu</name></author><author><name sortKey="Driess, Matthias" uniqKey="Driess M">Matthias Driess</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1002/chem.201103594</idno><idno type="RBID">pubmed:22549938</idno><idno type="pmid">22549938</idno><idno type="wicri:Area/Main/Corpus">000D32</idno><idno type="wicri:Area/Main/Curation">000D32</idno><idno type="wicri:Area/Main/Exploration">000D48</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Magnetic Resonance Spectroscopy</term><term>Organotin Compounds (chemical synthesis)</term><term>Organotin Compounds (chemistry)</term><term>Oxides (chemistry)</term><term>Tin Compounds</term><term>Transistors, Electronic</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemical synthesis" xml:lang="en"><term>Organotin Compounds</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Organotin Compounds</term><term>Oxides</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Magnetic Resonance Spectroscopy</term><term>Tin Compounds</term><term>Transistors, Electronic</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The syntheses and structural elucidation of dimeric [Sn(OCyHex)(2)] (1), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)(3)Sn}(2)] (M = Li (2), Na (3), K (4)), and of the first heteroleptic heterotermetallic Li/In/Sn-haloalkoxide clusters [X(2)In{LiSn(2)(OCyHex)(6)}] (X = Br (5), Cl (6)) with a double seco-norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin-rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy-dispersive X-ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin-containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In(2)O(3) lattice and partially occupied In(3+) sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin-film field-effect transistors (FETs) were fabricated by spin-coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25-700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge-carrier mobility of 6.36×10(-1) cm(2) V(-1) s (calcination at 250 °C) and an on/off current ratio of 10(6).</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22549938</PMID><DateCreated><Year>2012</Year><Month>06</Month><Day>13</Day></DateCreated><DateCompleted><Year>2012</Year><Month>09</Month><Day>26</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1521-3765</ISSN><JournalIssue CitedMedium="Internet"><Volume>18</Volume><Issue>25</Issue><PubDate><Year>2012</Year><Month>Jun</Month><Day>18</Day></PubDate></JournalIssue><Title>Chemistry (Weinheim an der Bergstrasse, Germany)</Title><ISOAbbreviation>Chemistry</ISOAbbreviation></Journal><ArticleTitle>Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors.</ArticleTitle><Pagination><MedlinePgn>7766-79</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1002/chem.201103594</ELocationID><Abstract><AbstractText>The syntheses and structural elucidation of dimeric [Sn(OCyHex)(2)] (1), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)(3)Sn}(2)] (M = Li (2), Na (3), K (4)), and of the first heteroleptic heterotermetallic Li/In/Sn-haloalkoxide clusters [X(2)In{LiSn(2)(OCyHex)(6)}] (X = Br (5), Cl (6)) with a double seco-norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin-rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy-dispersive X-ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin-containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In(2)O(3) lattice and partially occupied In(3+) sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin-film field-effect transistors (FETs) were fabricated by spin-coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25-700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge-carrier mobility of 6.36×10(-1) cm(2) V(-1) s (calcination at 250 °C) and an on/off current ratio of 10(6).</AbstractText><CopyrightInformation>Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Samedov</LastName><ForeName>Kerim</ForeName><Initials>K</Initials><Affiliation>Institute of Chemistry: Metalorganics and Inorganic Materials, Technische Universität Berlin, Strasse des 17. Juni 135, 10623 Berlin, Germany.</Affiliation></Author><Author ValidYN="Y"><LastName>Aksu</LastName><ForeName>Yilmaz</ForeName><Initials>Y</Initials></Author><Author ValidYN="Y"><LastName>Driess</LastName><ForeName>Matthias</ForeName><Initials>M</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>04</Month><Day>30</Day></ArticleDate></Article><MedlineJournalInfo><Country>Germany</Country><MedlineTA>Chemistry</MedlineTA><NlmUniqueID>9513783</NlmUniqueID><ISSNLinking>0947-6539</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Organotin Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Oxides</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Tin Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>18282-10-5</RegistryNumber><NameOfSubstance>stannic oxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Magnetic Resonance Spectroscopy</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Organotin Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemical synthesis</QualifierName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Oxides</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin Compounds</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Transistors, Electronic</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2011</Year><Month>11</Month><Day>15</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2012</Year><Month>2</Month><Day>11</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>4</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>5</Month><Day>3</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>5</Month><Day>3</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>9</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1002/chem.201103594</ArticleId><ArticleId IdType="pubmed">22549938</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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